 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| www..com Pb Free Plating Product ISSUED DATE :2005/03/01 REVISED DATE :2005/12/01B GU90T 03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 5m 75A The GU90T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions REF. A b L4 c L3 L1 E Millimeter REF. Min. Max. 4.40 4.80 c2 0.76 1.00 b2 0.00 0.30 B D 0.36 0.5 e 1.50 REF. L 2.29 2.79 9.80 10.4 L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 0 8 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : Tj, Tstg Ratings 30 f 20 75 63 350 96 0.7 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.3 62 Unit /W /W GU90T03 Page: 1/4 ISSUED DATE :2005/03/01 REVISED DATE :2005/12/01B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 30 0.8 Typ. 0.02 55 60 8.5 38 14 83 66 120 4090 1010 890 Max. 3.0 D 100 1 25 5 6 96 6540 pF ns nC Unit V V/ : V S nA uA uA mL Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=30A 20V VGS= D VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=45A VGS=4.5V, ID=30A ID=40A VDS=24V VGS=4.5V VDS=15V ID=30A VGS=10V RG=3.3 L RD=0.5 L VGS=0V VDS=25V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Trr Qrr Min. - Typ. 51 63 Max. 1.3 - Unit V ns nC Test Conditions IS=45A, VGS=0V IS=30A, VGS=0V dI/dt=100A/ s Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GU90T03 Page: 2/4 ISSUED DATE :2005/03/01 REVISED DATE :2005/12/01B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GU90T03 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/03/01 REVISED DATE :2005/12/01B Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GU90T03 Page: 4/4 |
Price & Availability of GU90T03
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |